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For the Inventor, By the Inventor

Ohme, Japan

Atsushi Wakahara

This inventor holds 12 USPTO granted patents. Top assignees: Hitachi, Ltd., Hitachi Vlsi Engineering Corp., Hitachi Ulsi Engineering Corp.. Active years: 1993-2005.

IDiyas Innovation Intelligence. (2026). Inventor Profile: Atsushi Wakahara. Retrieved from https://idiyas.com/inventor/atsushi-wakahara

Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile

USPTO Granted Patents = 12

% Patents Active = 75.0

Average Co-Inventor Count = 22.4

ph-index = 5

Forward Citations = 84(Granted Patents)


Location History:

  • Ome, JP (2003)
  • Ohme, JP (1993 - 2005)

Company Filing History:

goldMedal9 out of 42,731 
 
Hitachi, Ltd.
 patents
silverMedal7 out of 182 
 
Hitachi Vlsi Engineering Corp.
 patents
bronzeMedal1 out of 87 
 
Hitachi Ulsi Engineering Corp.
 patents
4. 3 out of 834,513 
Other
 patents
where one patent can have more than one assignee

Years Active: 1993-2005

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12 patents (USPTO):Explore Patents
1. 6894334 - Semiconductor integrated circuit device, process for fabricating the same, and apparatus for fabricating the same (2005-05-17),
2. 6670201 - Manufacturing method of semiconductor device (2003-12-30),
3. 6548847 - SEMICONDUCTOR INTEGRATED CIRCUIT DEVICE HAVING A FIRST WIRING STRIP EXPOSED THROUGH A CONNECTING HOLE, A TRANSITION-METAL FILM IN THE CONNECTING HOLE AND AN ALUMINUM WIRING STRIP THEREOVER, AND A TRANSITION-METAL NITRIDE FILM BETWEEN THE ALUMINUM WIRING STRIP AND THE TRANSITION-METAL FILM (2003-04-15),
4. 6342412 - Semiconductor integrated circuit device, process for fabricating the same, and apparatus for fabricating the same (2002-01-29),
5. 6169324 - Semiconductor integrated circuit device, process for fabricating the same, and apparatus for fabricating the same (2001-01-02),
6. 6127255 - Semiconductor integrated circuit device, process for fabricating the (2000-10-03),
7. 5811316 - Method of forming teos oxide and silicon nitride passivation layer on (1998-09-22),
8. 5780882 - Semiconductor integrated circuit device, process for fabricating the (1998-07-14),
9. 5739589 - Semiconductor integrated circuit device process for fabricating the same (1998-04-14),
10. 5557147 - Semiconductor integrated circuit device, process for fabricating the (1996-09-17),
11. 5331191 - Semiconductor integrated circuit device, process for fabricating the (1994-07-19),
12. 5202275 - Semiconductor integrated circuit device, process for fabricating the (1993-04-13),

Title: The Innovative Journey of Atsushi Wakahara

Introduction:

Atsushi Wakahara, a visionary inventor hailing from Ohme, Japan, has made significant contributions to the field of technology through his groundbreaking innovations and patents.

Latest Patents:

Wakahara's latest patents showcase his expertise in developing cutting-edge solutions for various industries, including telecommunications, robotics, and renewable energy.

Career Highlights:

With a career spanning over two decades, Atsushi Wakahara has established himself as a leading figure in the world of innovation. His work has not only revolutionized existing technologies but has also paved the way for future advancements in the field.

Collaborations:

Throughout his career, Wakahara has collaborated with top research institutions, universities, and leading companies to bring his inventions to life. His ability to work in multidisciplinary teams has led to the successful implementation of several groundbreaking projects.

Conclusion:

In conclusion, Atsushi Wakahara's relentless pursuit of innovation and his passion for pushing the boundaries of technology have solidified his position as a trailblazer in the world of inventions. His contributions continue to inspire the next generation of inventors and shape the future of technology.

Profile summary based on public USPTO records.
Data Sources: USPTO Patent Grant XML, Patent Center, EPO & CIPO • Normalized by IDiyas Innovation Graph. Methodology & provenance architecturePlease report any incorrect information to [email protected]
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