The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Dec. 30, 2003

Filed:

Aug. 28, 2001
Applicant:
Inventors:

Masaki Kouno, Ome, JP;

Masato Hamamoto, Iruma, JP;

Atsushi Wakahara, Ome, JP;

Hideyuki Takahashi, Hamura, JP;

Keiichi Higeta, Hamura, JP;

Mitsugu Kusunoki, Kunitachi, JP;

Kazutaka Mori, Kokubunji, JP;

Assignee:

Hitachi, Ltd., Tokyo, JP;

Attorney:
Primary Examiner:
Assistant Examiner:
Int. Cl.
CPC ...
G01R 3/126 ; H01L 2/166 ;
U.S. Cl.
CPC ...
G01R 3/126 ; H01L 2/166 ;
Abstract

A manufacturing method of a semiconductor device capable of obtaining highly reliable semiconductor devices with the realization of high integration and high speed intended is provided. During processes after a desired circuit including a CMOS static type circuit is formed on a semiconductor substrate until product shipment, a first operation of feeding a predetermined input signal to the circuit and retrieving a first output signal corresponding to it and a second operation of giving an operating condition of increasing an ON resistance value of MOSFETs constituting the CMOS static type circuit and retrieving a second output signal corresponding to the condition are conducted, and a testing step of determining a failure by the first output signal varying from the second output signal.


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