Matsudo, Japan

Atsushi Tomishima

This inventor holds 1 USPTO granted patent. Top assignees: Kabushiki Kaisha Toshiba, Toshiba Electronic Devices & Storage Corporation. Active years: 2025.

IDiyas Innovation Intelligence. (2026). Inventor Profile: Atsushi Tomishima. Retrieved from https://idiyas.com/inventor/atsushi-tomishima-g4rdsrmf

Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile


% Patents Active = 100.0

Average Co-Inventor Count = 6.0

ph-index = 1


Company Filing History:


Years Active: 2025

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1 patent (USPTO):Explore Patents

Title: Atsushi Tomishima: Innovator in Semiconductor Technology

Introduction

Atsushi Tomishima is a notable inventor based in Matsudo, Japan. He has made significant contributions to the field of semiconductor technology, particularly with his innovative designs and patents. His work has had a lasting impact on the industry.

Latest Patents

Atsushi Tomishima holds a patent for a semiconductor device. This device includes a package substrate with a base that features a mount portion and terminals. The semiconductor chip within the device has a first pad for ground voltage and a second pad connected to a terminal. Additionally, a first capacitor chip is integrated, which includes a capacitor unit in a silicon substrate, enhancing the device's functionality.

Career Highlights

Throughout his career, Atsushi Tomishima has worked with prominent companies such as Kabushiki Kaisha Toshiba and Toshiba Electronic Devices & Storage Corporation. His experience in these organizations has allowed him to develop and refine his expertise in semiconductor technology.

Collaborations

Atsushi has collaborated with notable colleagues, including Kenichi Agawa and Hidetoshi Miyahara. Their combined efforts have contributed to advancements in the semiconductor field.

Conclusion

Atsushi Tomishima is a distinguished inventor whose work in semiconductor technology continues to influence the industry. His patent and collaborations reflect his commitment to innovation and excellence in his field.

Profile summary based on public USPTO records.
Data Sources: USPTO Patent Grant XML, Patent Center, EPO & CIPO • Normalized by IDiyas Innovation Graph. Methodology & provenance architecturePlease report any incorrect information to [email protected]
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