Nanae, Japan

Atsushi Fujisawa


Average Co-Inventor Count = 1.4

ph-index = 4

Forward Citations = 33(Granted Patents)


Location History:

  • Hokkaido, JP (2013)
  • Nanae, JP (2012 - 2016)
  • Kameda, JP (2015 - 2016)

Company Filing History:


Years Active: 2012-2016

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9 patents (USPTO):Explore Patents

Title: Innovations by Atsushi Fujisawa

Introduction

Atsushi Fujisawa is a prominent inventor based in Nanae, Japan. He has made significant contributions to the field of semiconductor technology, holding a total of nine patents. His work focuses on enhancing the reliability and efficiency of semiconductor devices.

Latest Patents

Fujisawa's latest patents include a semiconductor device that features a trench portion formed at each of the four corner portions of a chip bonding region. This design is intended to suppress the peel-off of die-bond material during the reflow step when mounting the semiconductor device on a substrate. Additionally, he has developed a method for manufacturing semiconductor devices in QFN packages for vehicles, which addresses challenges related to lead-to-lead resin protrusions that can hinder solder fillet formation.

Career Highlights

Atsushi Fujisawa is currently employed at Renesas Electronics Corporation, where he continues to innovate in semiconductor technology. His expertise has led to advancements that improve the performance and reliability of electronic components.

Collaborations

Fujisawa has collaborated with notable colleagues such as Shigeki Tanaka and Hiroshi Fujii, contributing to a dynamic team focused on semiconductor innovations.

Conclusion

Atsushi Fujisawa's work in semiconductor technology exemplifies the impact of innovative thinking in the electronics industry. His patents and contributions continue to shape the future of reliable electronic devices.

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