Kawasaki, Japan

Atsunori Suzuki

This inventor holds 11 USPTO granted patents and 1 published patent application. Top assignees: Semiconductor Energy Laboratory Co., Ltd., Sharp Corporation. Active years: 1996-2012.

IDiyas Innovation Intelligence. (2026). Inventor Profile: Atsunori Suzuki. Retrieved from https://idiyas.com/inventor/atsunori-suzuki

Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile

USPTO Granted Patents = 11 

% Patents Active = 54.5

Average Co-Inventor Count = 7.3

ph-index = 9

Forward Citations = 826(Granted Patents)


Location History:

  • Kanagawa, JP (1996 - 2000)
  • Kangawa, JP (2005)
  • Kawasaki, JP (2008 - 2012)

Company Filing History:


Years Active: 1996-2012

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11 patents (USPTO):Explore Patents

Title: Atsunori Suzuki: Pioneer in Semiconductor Innovations

Introduction

Atsunori Suzuki, hailing from Kawasaki, Japan, is an accomplished inventor with a remarkable portfolio of 11 patents. His work primarily focuses on advancements in semiconductor technology, particularly in the development of transistors that enhance device performance.

Latest Patents

Among Atsunori Suzuki's latest contributions is a patented semiconductor device that incorporates transistors with silicided impurity regions. The design features a thin-film transistor (TFT) formed on an insulating substrate, which includes source, drain, and channel regions, along with a gate insulating film positioned on the channel region. A significant innovation in this design is the introduction of a high resistivity region located between the channel and drain regions, aimed at minimizing Ioff current. The method of forming this structure entails several key steps, including anodizing the gate electrode to create a porous anodic oxide film. This film serves as a mask for selectively removing parts of the gate insulating film, allowing it to extend beyond the gate electrode without completely covering the source and drain regions. Following this, an ion doping of one conductivity element is executed, which defines the high resistivity region beneath the gate insulating film.

Career Highlights

Suzuki's career is marked by his significant tenure at notable companies in the semiconductor industry, including the Semiconductor Energy Laboratory Co., Ltd. and Sharp Corporation. His innovative mindset has led him to develop cutting-edge technologies that contribute to the advancement of electronic devices.

Collaborations

Throughout his career, Atsunori Suzuki has collaborated with esteemed colleagues in the field, such as Hongyong Zhang and Naoaki Yamaguchi. These partnerships have enabled him to pool knowledge and expertise, further enhancing his contributions to semiconductor technology.

Conclusion

Atsunori Suzuki stands out as a prominent figure in the world of semiconductors, with a wealth of patents that reflect his dedication to innovation. His advancements not only push the boundaries of technology but also pave the way for future developments in efficient and high-performance electronic devices.

Profile summary based on public USPTO records.
Data Sources: USPTO Patent Grant XML, Patent Center, EPO & CIPO • Normalized by IDiyas Innovation Graph. Methodology & provenance architecturePlease report any incorrect information to [email protected]
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