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For the Inventor, By the Inventor

Nara, Japan

Atsuko Uemoto

This inventor holds 4 USPTO granted patents. Top assignee: Sharp Kabushiki Kaisha Corporation. Active years: 1989-1993.

USPTO Granted Patents = 4

% Patents Active = 100.0

Average Co-Inventor Count = 4.5

ph-index = 4

Forward Citations = 115(Granted Patents)


Company Filing History:

goldMedal4 out of 25,949 
 
Sharp Kabushiki Kaisha Corporation
 patents

Years Active: 1989-1993

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4 patents (USPTO):Explore Patents
1. 5229625 - Schottky barrier gate type field effect transistor (1993-07-20),
2. 4990994 - Electrode structure for silicon carbide semiconductors (1991-02-05),
3. 4897710 - Semiconductor device (1990-01-30),
4. 4865659 - Heteroepitaxial growth of SiC on Si (1989-09-12),
Profile summary based on public USPTO records.
Please report any incorrect information to [email protected]
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