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The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Patent No.:

US 4865659 B1

PDFFull Text
Date of Patent:
Sep. 12, 1989

Filed:

Nov. 24, 1987

Heteroepitaxial growth of sic on si

Applicant:
Inventors:

Mitsuhiro Shigeta, Joyo, JP;

Akira Suzuki, Nara, JP;

Katsuki Furukawa, Sakai, JP;

Yoshihisa Fujii, Nara, JP;

Akitsugu Hatano, Tenri, JP;

Atsuko Uemoto, Nara, JP;

Kenji Nakanishi, Shijonawate, JP;

Assignee:

Sharp Kabushiki Kaisha, Osaka, JP;

Attorney:

Irell & Manella

Primary Examiner:

Brian E Hearn

Assistant Examiner:

William Bunch

Int. Cl.
CPC ...
H01L / ; H01L / ;
U.S. Cl.
CPC ...
148 33 ; 148D / ; 148D / ; 148D / ; 148D / ; 156613 ; 437 81 ; 437100 ; 437126 ; 437939 ; 437770 ; 437976 ;
Abstract

A heteroepitaxial growth method comprising growing a semiconductor single-crystal film on a semiconductor single-crystal substrate with a lattice constant different from that of the semiconductor single-crystal film by chemical vapor deposition, the epitaxial orientation of the semiconductor single-crystal film being inclined at a certain angle with respect to the semiconductor single-crystal substrate.

Find Patent Forward Citations

Shigeta, Mitsuhiro. (1989). Heteroepitaxial growth of sic on si (U.S. Patent No. 4865659). U.S. Patent and Trademark Office. https://idiyas.com/patent/badge/4865659

Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile

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