The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Sep. 12, 1989
Filed:
Nov. 24, 1987
Applicant:
Inventors:
Mitsuhiro Shigeta, Joyo, JP;
Akira Suzuki, Nara, JP;
Katsuki Furukawa, Sakai, JP;
Yoshihisa Fujii, Nara, JP;
Akitsugu Hatano, Tenri, JP;
Atsuko Uemoto, Nara, JP;
Kenji Nakanishi, Shijonawate, JP;
Assignee:
Sharp Kabushiki Kaisha, Osaka, JP;
Attorney:
Primary Examiner:
Assistant Examiner:
Int. Cl.
CPC ...
H01L / ; H01L / ;
U.S. Cl.
CPC ...
148 33 ; 148D / ; 148D / ; 148D / ; 148D / ; 156613 ; 437 81 ; 437100 ; 437126 ; 437939 ; 437770 ; 437976 ;
Abstract
A heteroepitaxial growth method comprising growing a semiconductor single-crystal film on a semiconductor single-crystal substrate with a lattice constant different from that of the semiconductor single-crystal film by chemical vapor deposition, the epitaxial orientation of the semiconductor single-crystal film being inclined at a certain angle with respect to the semiconductor single-crystal substrate.