Armando Giannattasio

Title: Armando Giannattasio: Innovator in Semiconductor Technology

Introduction

Armando Giannattasio is a notable inventor based in Novara, Italy. He has made significant contributions to the field of semiconductor technology, particularly in the fabrication of silicon materials. With a total of two patents to his name, Giannattasio's work has advanced the methods used in the production of high-quality silicon ingots.

Latest Patents

Giannattasio's latest patents include innovative methods for the fabrication of indium-doped silicon using the Czochralski method. This method involves growing a monocrystalline silicon ingot by preparing a silicon melt in a crucible and introducing an inert gas into the chamber. The process allows for precise control of the indium dopant concentration in the ingot by adjusting the inert gas flow rate and the internal pressure of the chamber. Another significant patent focuses on liquid doping systems and methods for controlled doping of single crystal semiconductor material. This system includes a dopant reservoir and a feeding tube designed to introduce liquid dopant into a melt of semiconductor material, enhancing the efficiency of the doping process.

Career Highlights

Throughout his career, Giannattasio has worked with several prominent companies, including Corner Star Limited and MEMC Electronic Materials S.p.A. His experience in these organizations has contributed to his expertise in semiconductor manufacturing and innovation.

Collaborations

Giannattasio has collaborated with notable professionals in his field, including Roberto Scala and Luigi Bonanno. These partnerships have fostered a collaborative environment that encourages innovation and the sharing of ideas.

Conclusion

Armando Giannattasio's contributions to semiconductor technology through his patents and collaborations highlight his role as an influential inventor. His work continues to impact the industry, paving the way for advancements in silicon fabrication methods.