Lafayette, IN, United States of America

Aric K Menon


Average Co-Inventor Count = 2.8

ph-index = 6

Forward Citations = 568(Granted Patents)


Location History:

  • Fremont, CA (US) (2002 - 2005)
  • Lafayette, IN (US) (2005)

Company Filing History:


Years Active: 2002-2005

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6 patents (USPTO):

Title: Aric K Menon: Innovator in Magnetic Memory and Hard Disk Drive Technologies

Introduction

Aric K Menon is a notable inventor based in Lafayette, IN (US), recognized for his contributions to the fields of magnetic memory and hard disk drive technologies. With a total of six patents to his name, Menon has made significant advancements that enhance data storage and retrieval processes.

Latest Patents

Among his latest patents is the "High Capacity MRAM Memory Array Architecture," which discloses a magnetic memory system. This innovative design includes a first magnetic tunneling junction and a reference magnetic tunneling junction, featuring multiple ferromagnetic layers and insulating layers. Another significant patent is for "Airflow Assisted Ramp Loading and Unloading of Sliders in Hard Disk Drives." This invention directs windage proximate to a spinning disk through apertures in a ramp, facilitating smoother loading and unloading of sliders in disk drives.

Career Highlights

Throughout his career, Aric K Menon has worked with prominent companies such as Read Rite Corporation and Western Digital, where he has applied his expertise in developing cutting-edge technologies. His work has contributed to the evolution of data storage solutions, making them more efficient and reliable.

Collaborations

Menon has collaborated with talented individuals in the industry, including Muhammad A Hawwa and Jamshid Bozorgi. These partnerships have fostered innovation and have led to the successful development of various technologies.

Conclusion

Aric K Menon's contributions to magnetic memory and hard disk drive technologies highlight his role as a significant inventor in the field. His innovative patents and collaborations continue to influence advancements in data storage solutions.

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