Toulouse, France

Aref Zaouk

This inventor holds 1 USPTO granted patent. Top assignee: Agence Nationale De Valorisation De La Recherche (Anvar). Active years: 1981.

IDiyas Innovation Intelligence. (2026). Inventor Profile: Aref Zaouk. Retrieved from https://idiyas.com/inventor/aref-zaouk

Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile


% Patents Active = 100.0

Average Co-Inventor Count = 6.0

ph-index = 1

Forward Citations = 33(Granted Patents)


Company Filing History:


Years Active: 1981

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1 patent (USPTO):Explore Patents

Title: Aref Zaouk: Innovator in Semiconductor Technology

Introduction

Aref Zaouk is a notable inventor based in Toulouse, France. He has made significant contributions to the field of semiconductor technology, particularly through his innovative processes for depositing semiconductor layers.

Latest Patents

Aref Zaouk holds a patent for a process titled "Process for depositing a III-V semi-conductor layer on a substrate." This process involves depositing a layer of a semiconductor composition comprising elements M(III) and M'(V) onto a substrate. The method includes contacting the substrate with a coordination compound in the gaseous phase, which stabilizes the donor/acceptor bond between the elements. The process further involves decomposing the coordination compound to deposit the semiconductor composition onto the substrate.

Career Highlights

Aref Zaouk is associated with the Agence Nationale De Valorisation De La Recherche (ANVAR), where he has been instrumental in advancing research and development in semiconductor technologies. His work has implications for various applications in electronics and materials science.

Collaborations

Aref has collaborated with notable colleagues such as Georges Constant and Raymond Haran, contributing to the advancement of semiconductor research and innovation.

Conclusion

Aref Zaouk's contributions to semiconductor technology through his patented processes highlight his role as an influential inventor in the field. His work continues to impact the development of advanced materials and electronic devices.

Profile summary based on public USPTO records.
Data Sources: USPTO Patent Grant XML, Patent Center, EPO & CIPO • Normalized by IDiyas Innovation Graph. Methodology & provenance architecturePlease report any incorrect information to [email protected]
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