Niiza, Japan

Arata Shiomi


 

Average Co-Inventor Count = 2.0

ph-index = 1

Forward Citations = 3(Granted Patents)


Company Filing History:


Years Active: 2012

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1 patent (USPTO):Explore Patents

Title: Arata Shiomi: Innovator in Semiconductor Technology

Introduction

Arata Shiomi is a prominent inventor based in Niiza, Japan. He is known for his contributions to semiconductor technology, particularly in the development of devices that enhance bonding strength while preventing damage to interlayer insulation films.

Latest Patents

Shiomi holds a patent for a semiconductor device and its manufacturing method. This invention addresses the challenges of maintaining bonding strength while preventing breaks in the interlayer insulation film and electrode during the bonding process. The semiconductor device features an interlayer insulation film with an aperture part defined by an extension part that covers the gate electrode and extends in a specific direction. The design includes a connection part that connects adjacent extension parts, exposing the main surfaces of both the base and emitter regions. Notably, the second width dimension in the first direction below the connection part is larger than the first width dimension in the second direction of the emitter region below the extension part of the interlayer insulation film.

Career Highlights

Arata Shiomi is associated with Sanken Electric Co., Ltd., where he has made significant contributions to the field of semiconductor technology. His work has been instrumental in advancing the efficiency and reliability of semiconductor devices.

Collaborations

Shiomi collaborates with Katsuyuki Torii, further enhancing the innovative efforts within the semiconductor industry.

Conclusion

Arata Shiomi's work in semiconductor technology exemplifies the importance of innovation in enhancing device performance and reliability. His contributions continue to influence the field significantly.

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