The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Jun. 26, 2012

Filed:

Sep. 19, 2008
Applicants:

Katsuyuki Torii, Niiza, JP;

Arata Shiomi, Niiza, JP;

Inventors:

Katsuyuki Torii, Niiza, JP;

Arata Shiomi, Niiza, JP;

Assignee:

Sanken Electric Co., Ltd., Niiza-shi, JP;

Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 23/48 (2006.01);
U.S. Cl.
CPC ...
Abstract

The present invention provides a semiconductor device and manufacturing method of the semiconductor device which can prevent breaks in an interlayer insulation film () and electrode () that arise with bonding while maintaining bonding strength. A semiconductor element () mounted on a semiconductor device including an interlayer insulation film () which has an aperture part () having an opening shape which is defined by an extension part () which covers the gate electrode () and extends in the first direction, a connection part (), the extension part () and the connection part () which connects at fixed intervals in the first direction a pair of extension parts () which are adjacent to the second direction, and which exposes a main surface of a base region () and a main surface of an emitter region (). Also, a second width dimension (W) in the first direction below the connection part () is larger than a first width dimension (W) in the second direction of the emitter region () below the extension part () of the interlayer insulation film ().


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