Tampere, Finland

Antti MÄÄTTÄNEN

This inventor holds 1 USPTO granted patent and 1 published patent application and 1 EPO patent. Top assignees: Schott Ag, Schott Primoceler Oy. Active years: 2026.

IDiyas Innovation Intelligence. (2026). Inventor Profile: Antti MÄÄTTÄNEN. Retrieved from https://idiyas.com/inventor/antti-maattanen-ypbmchrf

Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile

Calculating rank
USPTO Granted Patents = 1 


Average Co-Inventor Count = 1.0


Company Filing History:


Years Active: 2026

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1 patent (USPTO):Explore Patents

Title: Antti Määttänen and a Method for Assessing Substrate-Stack Bond Quality.

Introduction

Antti Määttänen is an inventor associated with Tampere, Finland. His patent work includes a method for checking and producing a substrate-stack assembly, as well as a hermetically sealed enclosure produced using that method.

Latest Patents

Määttänen is credited with 1 patent: “Method for Checking and Producing a Composite of a Substrate Stack, and Hermetically Sealed Enclosure Produced According to Said Method.” The invention describes arranging a transparent first substrate against a second substrate to form a stack, then irradiating a contact area and detecting the resulting radiative reflection. The reflection is used to determine a bond quality index for the contact area, providing a way to assess the assembly.

Career Highlights

Määttänen’s listed company affiliations include SCHOTT AG and SCHOTT Primoceler Oy. His patent focuses on evaluating substrate bonding and producing or checking assemblies intended for applications such as hermetically sealed enclosures.

Collaborations

Petri Rokka is identified as a coworker associated with Määttänen.

Conclusion

Antti Määttänen’s recorded invention applies radiative reflection to assess bond quality in substrate stacks, connecting his patent work with his listed affiliations at SCHOTT companies.

Profile summary based on public USPTO records.
Data Sources: USPTO Patent Grant XML, Patent Center, EPO & CIPO • Normalized by IDiyas Innovation Graph. Methodology & provenance architecturePlease report any incorrect information to [email protected]
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