Catania, Italy

Antonino Alessandria

This inventor holds 9 USPTO granted patents and 1 EPO patent. Top assignee: Stmicroelectronics S.r.l.. Active years: 2006-2017.

IDiyas Innovation Intelligence. (2026). Inventor Profile: Antonino Alessandria. Retrieved from https://idiyas.com/inventor/antonino-alessandria

Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile


% Patents Active = 100.0

 

Average Co-Inventor Count = 2.5

ph-index = 3

Forward Citations = 29(Granted Patents)


Company Filing History:


Years Active: 2006-2017

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9 patents (USPTO):Explore Patents

Title: Antonino Alessandria: Innovator in Semiconductor Technology

Introduction

Antonino Alessandria is a prominent inventor based in Catania, Italy. He has made significant contributions to the field of semiconductor technology, holding a total of 9 patents. His work focuses on innovative diode designs and power devices that enhance the efficiency and functionality of electronic components.

Latest Patents

One of Alessandria's latest patents is for a diode with insulated anode regions. This diode is integrated on a semiconductor chip with anode and cathode surfaces positioned opposite each other. It features a cathode region that extends inwardly from the cathode surface, a drift region between the anode surface and the cathode region, and multiple anode regions extending from the anode surface within the drift region. The design includes a cathode electrode connected to the cathode region and an anode electrode that contacts certain anode regions while remaining insulated from floating anode regions. This configuration allows charge carriers to be injected from the floating anode regions into the drift region when a control voltage surpasses a threshold voltage.

Another notable patent involves an integrated power device on a semiconductor substrate with an improved trench gate structure. This power device incorporates several conductive bridges within a trench gate structure. The semiconductor substrate features a trench with sidewalls and a bottom, which are covered with a first insulating coating layer that also includes a conductive gate structure. The design allows for the formation of a conductive gate structure that covers the sidewalls with a second conductive coating layer made of a different conductive material, resulting in a central region that forms multiple conductive bridges.

Career Highlights

Antonino Alessandria is currently employed at STMicroelectronics S.r.l., where he continues to develop cutting-edge semiconductor technologies. His innovative designs have contributed to advancements in electronic devices, making them more efficient and reliable.

Collaborations

Throughout his career, Alessandria has collaborated with notable colleagues, including Leonardo Fragapane and Angelo Magri. These partnerships have fostered a creative environment that encourages the development of groundbreaking technologies.

Conclusion

Antonino Alessandria is a key figure in the semiconductor industry, with a strong portfolio of patents that reflect his innovative spirit. His contributions to diode and power device technology continue to influence the field, showcasing the importance of creativity and collaboration in driving technological advancements.

Profile summary based on public USPTO records.
Data Sources: USPTO Patent Grant XML, Patent Center, EPO & CIPO • Normalized by IDiyas Innovation Graph. Methodology & provenance architecturePlease report any incorrect information to [email protected]
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