The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Mar. 04, 2014

Filed:

Dec. 22, 2009
Applicants:

Angelo Magri, Belpasso, IT;

Antonino Sebastiano Alessandria, Catania, IT;

Stefania Fortuna, Acicastello, IT;

Leonardo Fragapane, Catania, IT;

Inventors:

Angelo Magri, Belpasso, IT;

Antonino Sebastiano Alessandria, Catania, IT;

Stefania Fortuna, Acicastello, IT;

Leonardo Fragapane, Catania, IT;

Assignee:

STMicroelectronics S.R.L., Agrate Brianza, IT;

Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 29/66 (2006.01);
U.S. Cl.
CPC ...
Abstract

A power device integrated on a semiconductor substrate and having a plurality of conductive bridges within a trench gate structure. In an embodiment, a semiconductor substrate includes a trench having sidewalls and a bottom, the walls and bottom are covered with a first insulating coating layer which then also includes a conductive gate structure. An embodiment provides the formation of the conductive gate structure with covering at least the sidewalls with a second conductive coating layer of a first conductive material. This results in a conductive central region of a second conductive material having a different resistivity than the first conductive material forming a plurality of conductive bridges between said second conductive coating layer and said conductive central region.


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