Ansgar Laubsch

Title: Ansgar Laubsch: Innovator in Optoelectronic Semiconductor Technology

Introduction

Ansgar Laubsch is a notable inventor based in Wuppertal, Germany. He has made significant contributions to the field of optoelectronics, particularly through his innovative work on semiconductor technology. His expertise and creativity have led to the development of advanced solutions that enhance the performance of optoelectronic devices.

Latest Patents

Ansgar Laubsch holds a patent for an electrically pumped optoelectronic semiconductor chip. This invention includes at least two radiation-active quantum wells comprising InGaN or consisting thereof. The semiconductor chip features at least two cover layers made of AlGaN, each assigned to a specific radiation-active quantum well. Notably, the distance between the radiation-active quantum well and the associated cover layer is at most 1.5 nm, showcasing the precision of his design.

Career Highlights

Ansgar Laubsch is currently employed at Osram Opto Semiconductors GmbH, where he continues to push the boundaries of semiconductor technology. His work has been instrumental in advancing the capabilities of optoelectronic devices, making them more efficient and effective for various applications.

Collaborations

Throughout his career, Ansgar has collaborated with talented individuals such as Matthias Peter and Tobias Meyer. These partnerships have fostered a creative environment that encourages innovation and the sharing of ideas.

Conclusion

Ansgar Laubsch's contributions to the field of optoelectronics exemplify the impact of innovative thinking in technology. His patent for an electrically pumped optoelectronic semiconductor chip highlights his commitment to advancing semiconductor technology.