The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Nov. 12, 2013
Filed:
Jun. 30, 2010
Matthias Peter, Regensburg, DE;
Tobias Meyer, Ihrlerstein, DE;
Jürgen Off, Regensburg, DE;
Tetsuya Taki, Yokohama, JP;
Joachim Hertkorn, Alteglofsheim, DE;
Matthias Sabathil, Regensburg, DE;
Ansgar Laubsch, Regensburg, DE;
Andreas Biebersdorf, Regensburg, DE;
Matthias Peter, Regensburg, DE;
Tobias Meyer, Ihrlerstein, DE;
Jürgen Off, Regensburg, DE;
Tetsuya Taki, Yokohama, JP;
Joachim Hertkorn, Alteglofsheim, DE;
Matthias Sabathil, Regensburg, DE;
Ansgar Laubsch, Regensburg, DE;
Andreas Biebersdorf, Regensburg, DE;
Abstract
An electrically pumped optoelectronic semiconductor chip includes at least two radiation-active quantum wells comprising InGaN or consisting thereof. The optoelectronic semiconductor chip includes at least two cover layers which include AlGaN or consist thereof. Each of the cover layers is assigned to precisely one of the radiation-active quantum wells. The cover layers are each located on a p-side of the associated radiation-active quantum well. The distance between the radiation-active quantum well and the associated cover layer is at most 1.5 nm.