Anqing Zhang

Title: Anqing Zhang: Innovator in Semiconductor Memory Technology

Introduction

Anqing Zhang is a prominent inventor based in Singapore, known for his contributions to semiconductor memory technology. With a total of 3 patents, he has made significant advancements in the field, particularly in flash memory array structures and manufacturing methods.

Latest Patents

One of Zhang's latest patents is titled "Flash memory array structure with reduced bit-line pitch." This invention introduces a new method for creating floating gates in flash memory arrays. Unlike conventional methods that utilize a single polysilicon deposition and etch, Zhang's approach employs a double polysilicon deposition followed by a double polysilicon etch process. This innovation allows for reduced spacing between adjacent floating gates, enhancing the efficiency of memory devices.

Another notable patent is the "Method of manufacturing a gate structure for a semiconductor memory device with improved breakdown voltage and leakage rate." This invention features a novel intergate dielectric stack, specifically an O/N/SiON/O structure, which forms a silicon oxynitride layer on a silicon nitride layer. The method involves the sequential stacking of insulating and conductive layers on a semiconductor substrate, ultimately leading to the formation of a floating gate, intergate dielectric, and control gate.

Career Highlights

Anqing Zhang has worked with several esteemed organizations throughout his career. He has been associated with Chartered Semiconductor Manufacturing Ltd, where he contributed to advancements in semiconductor technology. Additionally, he has been involved with Nanyang Technological University, furthering research and development in the field.

Collaborations

Zhang has collaborated with notable colleagues, including Jin Da and Sung Rae Kim, who have contributed to his research endeavors and innovations in semiconductor memory technology.

Conclusion

Anqing Zhang's work in semiconductor memory technology has led to significant innovations that enhance the performance and efficiency of memory devices. His patents reflect a deep understanding of the complexities involved in semiconductor manufacturing, positioning him as a key figure in the industry.