Company Filing History:

10 out of 429

Energy Conversion Devices, Inc.

patents

1 out of 30

Ovonic Synthetic Materials Company Inc.

patents

Years Active: 1986-1988

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11 patents (USPTO):Sort by Forward CitationsExplore Patents

1. 4783374 - Coated article and method of manufacturing the article (1988-11-08),

2. 4769682 - Boron doped semiconductor materials and method for producing same (1988-09-06),

3. 4756924 - Method for the microwave fabrication of boron doped semiconductor (1988-07-12),

4. 4737379 - Plasma deposited coatings, and low temperature plasma method of making (1988-04-12),

5. 4729341 - Method and apparatus for making electrophotographic devices (1988-03-08),

6. 4721663 - Enhancement layer for negatively charged electrophotographic devices (1988-01-26),

7. 4715927 - Improved method of making a photoconductive member (1987-12-29),

8. 4713309 - Enhancement layer for positively charged electrophotographic devices and (1987-12-15),

9. 4624862 - Boron doped semiconductor materials and method for producing same (1986-11-25),

10. 4619729 - Microwave method of making semiconductor members (1986-10-28),

11. 4582773 - Electrophotographic photoreceptor and method for the fabrication thereof (1986-04-15),

Title: Annette G Johncock: Innovator in Semiconductor Technology

Introduction

Annette G Johncock is a prominent inventor based in Royal Oak, MI (US), known for her significant contributions to the field of semiconductor technology. With a total of 11 patents to her name, she has made remarkable advancements in the manufacturing of coated articles and semiconductor materials.

Latest Patents

Among her latest patents is the "Coated article and method of manufacturing the article." This invention discloses a coated article featuring a substrate with an adherent, abrasion-resistant alkene-silane plasma reaction product coating. The coating is designed to be substantially transparent to visible light while partially absorbing ultraviolet light. It utilizes a plasma-assisted chemical vapor deposition process for application. Another notable patent is "Boron doped semiconductor materials and method for producing same." This patent describes an improved p-type semiconductor alloy film and an intrinsic amorphous semiconductor alloy film. These films enhance photovoltaic and photoresponsive devices and incorporate innovative methods for fabrication using r.f. and microwave glow discharge techniques.

Career Highlights

Throughout her career, Annette has worked with notable companies such as Energy Conversion Devices, Inc. and Ovonic Synthetic Materials Company Inc. Her work has significantly impacted the development of advanced materials in the semiconductor industry.

Collaborations

Annette has collaborated with esteemed colleagues, including Stephen J Hudgens and Prem Nath, contributing to her innovative projects and research.

Conclusion

Annette G Johncock's contributions to semiconductor technology and her impressive portfolio of patents highlight her role as a leading inventor in her field. Her work continues to influence advancements in materials science and engineering.

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