The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Jul. 12, 1988

Filed:

Apr. 10, 1986
Applicant:
Inventors:

Chi C Yang, Troy, MI (US);

Ralph Mohr, Detroit, MI (US);

Stephen Hudgens, Southfield, MI (US);

Annette Johncock, Walled Lake, MI (US);

Prem Nath, Rochester, MI (US);

Assignee:
Attorneys:
Primary Examiner:
Assistant Examiner:
Int. Cl.
CPC ...
B05D / ; B05D / ;
U.S. Cl.
CPC ...
427 39 ; 427 451 ;
Abstract

A microwave glow discharge method for the deposition of p-doped semiconductor alloy material, which material is characterized by mono-atomic and tetrahedral incorporation of boron species into the semiconductor host matrix, thereby providing a p-doped semiconductor alloy material characterized by reduced bulk strain, reduced nucleation of undesirable morphological growth, improved adhesion to a substrate and reduced peeling and cracking.


Find Patent Forward Citations

Yang, Chi. (1988). Method for the microwave fabrication of boron doped semiconductor (U.S. Patent No. 4756924). U.S. Patent and Trademark Office. https://idiyas.com/patent/badge/4756924

Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile

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