The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Apr. 12, 1988

Filed:

Mar. 31, 1987
Applicant:
Inventors:

Stephen J Hudgens, Southfield, MI (US);

Annette G Johncock, Royal Oak, MI (US);

Stanford R Ovshinsky, Bloomfield Hills, MI (US);

Prem Nath, Rochester, MI (US);

Assignee:
Attorneys:
Primary Examiner:
Int. Cl.
CPC ...
B05D / ;
U.S. Cl.
CPC ...
427 39 ; 437234 ;
Abstract

A method of depositing a substantially hydrogen free or controlled hydrogen content multi-element alloy film on a substrate. The method utilizes a microwave excited plasma of a hydrogen free precursor gas to deposit a hard, adherent coating. The method comprises providing a substrate to be coated in a vacuum deposition chamber, with a source of microwave energy coupled to the vacuum deposition chamber. A substantially hydrogen free reaction gas precursor composition is introduced into the reaction chamber at a pressure corresponding substantially to a pressure minimum of the modified Paschen curve for the reaction gas precursor composition. Activation of the source of microwave energy excites the reaction gas precursor composition, in this way forming a plasma in the vacuum deposition chamber to deposit a substantially hydrogen free or controlled hydrogen content multi-element alloy film on the substrate.


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