Osnago, Italy

Annamaria Votta

This inventor holds 2 USPTO granted patents. Top assignee: Stmicroelectronics S.r.l.. Active years: 2020-2023.


% Patents Active = 100.0

Average Co-Inventor Count = 6.0

ph-index = 1

Forward Citations = 1(Granted Patents)


Company Filing History:


Years Active: 2020-2023

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2 patents (USPTO):Explore Patents

Title: Annamaria Votta: Innovator in Integrated Electronic Devices

Introduction

Annamaria Votta is a distinguished inventor based in Osnago, Italy. She has made significant contributions to the field of integrated electronic devices, holding 2 patents that showcase her innovative spirit and technical expertise.

Latest Patents

Her latest patents include an integrated electronic device with a redistribution region and a high resilience to mechanical stresses, along with a method for its preparation. This invention details a method of manufacturing an integrated electronic device that includes a semiconductor body and a passivation structure. The process involves forming a hole that extends into the frontal surface and through the frontal dielectric layer, creating a conductive region within the hole. A barrier layer is also formed, and a series of coating layers are applied to enhance the device's functionality. The second patent further elaborates on the integrated electronic device, emphasizing the importance of the barrier structure and the cavity formed between the redistribution region and the frontal surface.

Career Highlights

Annamaria Votta is currently employed at STMicroelectronics S.r.l., where she continues to push the boundaries of technology. Her work focuses on developing advanced electronic devices that are both efficient and resilient.

Collaborations

Throughout her career, Annamaria has collaborated with notable colleagues, including Francesco Maria Pipia and Ivan Venegoni. These partnerships have fostered a creative environment that encourages innovation and the sharing of ideas.

Conclusion

Annamaria Votta stands out as a prominent figure in the realm of integrated electronic devices. Her patents reflect her dedication to advancing technology and her ability to solve complex engineering challenges.

Profile summary based on public USPTO records.
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