The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Feb. 21, 2023
Filed:
Aug. 21, 2020
Stmicroelectronics S.r.l., Agrate Brianza, IT;
Francesco Maria Pipia, Milan, IT;
Ivan Venegoni, Bareggio, IT;
Annamaria Votta, Osnago, IT;
Francesca Milanesi, Milan, IT;
Samuele Sciarrillo, Usmate Velate, IT;
Paolo Colpani, Agrate Brianza, IT;
STMICROELECTRONICS S.r.l., Agrate Brianza, IT;
Abstract
A method of manufacturing an integrated electronic device including a semiconductor body and a passivation structure including a frontal dielectric layer bounded by a frontal surface. A hole is formed extending into the frontal surface and through the frontal dielectric layer. A conductive region is formed in the hole. A barrier layer is formed in the hole and extends into the hole. A first coating layer covers a top and sides of a redistribution region of the conductive region and a second coating layer covers is formed covering the first coating layer. A capillary opening is formed extending into the first and second coating layers to the barrier layer. A cavity is formed between the redistribution region and the frontal surface and is bounded on one side by the first coating layer and on the other by the barrier structure by passing an aqueous solution through the capillary opening.