South Burlington, VT, United States of America

Ann Rand Burke

This inventor holds 1 USPTO granted patent. Top assignee: International Business Machines Corporation. Active years: 2000.

IDiyas Innovation Intelligence. (2026). Inventor Profile: Ann Rand Burke. Retrieved from https://idiyas.com/inventor/ann-rand-burke

Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile

Calculating rank

% Patents Active = 100.0

Average Co-Inventor Count = 3.0

ph-index = 1

Forward Citations = 6(Granted Patents)


Company Filing History:


Years Active: 2000

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1 patent (USPTO):Explore Patents

Title: Ann Rand Burke and Her Patent for Programmed Defect Masks.

Introduction

Ann Rand Burke is an inventor associated with South Burlington, Vermont, and International Business Machines Corporation. Her patent work addresses the fabrication of sublithographic structures for semiconductor applications.

Latest Patents

Burke is credited with 1 patent: “Programmed defect mask with defects smaller than 0.1 μm.” The patent describes a method for creating programmed defect masks with defects smaller than 0.1 micrometers. It involves forming layers of base and photosensitive materials, exposing offset image segments, and developing the photosensitive material to reveal selected areas of the base layer.

Career Highlights

Burke’s patent reflects work on precise patterning techniques that can produce structures below conventional lithographic dimensions. The disclosed method also provides a way to create programmed defects for use in mask-related applications.

Collaborations

The patent information names Denis Marc Rigaill and Jacek G. Smolinski as Burke’s coworkers. Her company affiliation is International Business Machines Corporation.

Conclusion

Ann Rand Burke’s patent documents a specialized approach to producing programmed defect masks with sub-0.1-micrometer features, highlighting her contribution to advanced patterning technology.

Profile summary based on public USPTO records.
Data Sources: USPTO Patent Grant XML, Patent Center, EPO & CIPO • Normalized by IDiyas Innovation Graph. Methodology & provenance architecturePlease report any incorrect information to [email protected]
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