Hillsboro, OR, United States of America

Ankit Kirit Lakhani

This inventor holds 2 USPTO granted patents and 5 published patent applications. Top assignee: Intel Corporation. Active years: 2026.

IDiyas Innovation Intelligence. (2026). Inventor Profile: Ankit Kirit Lakhani. Retrieved from https://idiyas.com/inventor/ankit-kirit-lakhani

Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile

USPTO Granted Patents = 2 

% Patents Active = 50.0

Average Co-Inventor Count = 11.0

ph-index = 1


Company Filing History:


Years Active: 2026

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2 patents (USPTO):Explore Patents

Title: Ankit Kirit Lakhani: Innovator in Integrated Circuit Structures

Introduction

Ankit Kirit Lakhani is an inventor based in Hillsboro, OR (US). He is known for his contributions to the field of integrated circuit structures. Although he currently holds no granted patents, his innovative ideas are reflected in his latest patent applications.

Latest Patent Applications

Ankit Lakhani has filed several notable patent applications. One of his applications is titled "INTEGRATED CIRCUIT STRUCTURES HAVING UNIFORM GRID METAL GATE AND TRENCH CONTACT PLACEHOLDER CUT WITH DIRECT PATTERNED TRENCH CONTACT." This application describes integrated circuit structures that include a gate electrode over a vertical stack of horizontal nanowires or a fin. The structure features a conductive trench contact adjacent to the gate electrode, separated by a dielectric sidewall spacer. Additionally, first and second dielectric cut plug structures extend through the gate electrode and the dielectric sidewall spacer, reaching a lower portion of the conductive trench contact. An upper dielectric plug is positioned on the first dielectric cut plug and is laterally adjacent to the upper portion of the trench contact structure.

Another application is titled "INTEGRATED CIRCUIT STRUCTURES WITH TRENCH CONTACT SPACER STRUCTURE." This application outlines integrated circuit structures that incorporate trench contact spacer structures. The described structure includes a fin or a vertical stack of horizontal nanowires, a gate stack, and an epitaxial source or drain structure. It features a first conductive layer on the epitaxial source or drain structure, with a second conductive layer on top of the first. The application also details the arrangement of dielectric spacers and conductive fill material, emphasizing the innovative design of the trench contact spacer structure.

Conclusion

Ankit Kirit Lakhani is an emerging inventor in the field of integrated circuit technology. His latest patent applications showcase his innovative approach to circuit design. As he continues to develop his ideas, he may contribute significantly to advancements in this area.

Profile summary based on public USPTO records.
Data Sources: USPTO Patent Grant XML, Patent Center, EPO & CIPO • Normalized by IDiyas Innovation Graph. Methodology & provenance architecturePlease report any incorrect information to [email protected]
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