Grenoble, France

Anis Jouini

This inventor holds 3 USPTO granted patents and 1 published patent application. Top assignees: Silicor Materials Inc., Calisolar Inc.. Active years: 2011-2015.

IDiyas Innovation Intelligence. (2026). Inventor Profile: Anis Jouini. Retrieved from https://idiyas.com/inventor/anis-jouini-phoi1q7u

Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile

Calculating rank
USPTO Granted Patents = 3 

Average Co-Inventor Count = 6.4

ph-index = 1

Forward Citations = 3(Granted Patents)


Company Filing History:


Years Active: 2011-2015

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3 patents (USPTO):Explore Patents

Title: Inventor Anis Jouini: Pioneering Innovation in Silicon Technology

Introduction

Anis Jouini, a prominent inventor based in Grenoble, France, has made significant contributions to the field of silicon technology. With a total of three patents to his name, Jouini has focused on innovative methods that enhance the quality and efficiency of silicon ingot production. His work is pivotal in the semiconductor industry, particularly in the development of techniques that control the resistivity of silicon materials.

Latest Patents

Anis Jouini's latest patents reflect his expertise in semiconductor materials and processes. One notable patent is for a "Method and system for controlling resistivity in ingots made of compensated feedstock silicon." This invention addresses the challenges associated with producing silicon ingots from compensated feedstock silicon material. It involves preparing an upgraded metallurgical silicon feedstock that is melted to form a silicon melt. During the process, concentrations of boron, phosphorus, aluminum, and gallium are carefully managed to ensure that the resulting silicon predominantly maintains a single type of conductivity. Additionally, his patent includes methods for repeatedly measuring resistivity during ingot formation, facilitating continuous adjustments to maintain the desired quality.

Another significant patent is titled "Quality control process for UMG-Si feedstock." This innovation provides a detailed quality control mechanism to assess the concentrations of boron and phosphorus in a UMG-Si feedstock batch. By forming a silicon test ingot through directional solidification and mapping its resistivity profile, this process allows for accurate calculations of the chemical concentrations in the feedstock. The ability to grow multiple test ingots simultaneously represents a step forward in improving production efficiency.

Career Highlights

Throughout his career, Anis Jouini has worked with notable companies in the silicon industry, including Silicor Materials Inc. and Calisolar Inc. His experience at these organizations has enriched his expertise and allowed him to contribute innovative solutions to the field. Jouini’s work not only enhances the semiconductor manufacturing process but also emphasizes the importance of quality control in silicon feedstock production.

Collaborations

Anis Jouini has had the privilege of collaborating with esteemed colleagues in the industry, including Fritz Kirscht and Matthias Heuer. These partnerships have facilitated the exchange of ideas and propelled advancements in silicon technology. Together, they have tackled complex challenges related to silicon resistivity and quality assurance in the semiconductor supply chain.

Conclusion

In summary, Anis Jouini stands out as an influential inventor whose work has significantly advanced the field of silicon technology. With his innovative patents and collaborative spirit, he continues to support the development of more efficient and controlled methods for silicon ingot production. As the semiconductor industry evolves, Jouini's contributions will undoubtedly play a crucial role in shaping its future.

Profile summary based on public USPTO records.
Data Sources: USPTO Patent Grant XML, Patent Center, EPO & CIPO • Normalized by IDiyas Innovation Graph. Methodology & provenance architecturePlease report any incorrect information to [email protected]
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