The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Oct. 01, 2013
Filed:
Apr. 29, 2010
Kamel Ounadjela, Belmont, CA (US);
Marcin Walerysiak, Skrzeszew, PL;
Anis Jouini, Grenoble, FR;
Matthias Heuer, Berlin, DE;
Omar Sidelkheir, Sunnyvale, CA (US);
Alain Blosse, Belmont, CA (US);
Fritz Kirscht, Berlin, DE;
Kamel Ounadjela, Belmont, CA (US);
Marcin Walerysiak, Skrzeszew, PL;
Anis Jouini, Grenoble, FR;
Matthias Heuer, Berlin, DE;
Omar Sidelkheir, Sunnyvale, CA (US);
Alain Blosse, Belmont, CA (US);
Fritz Kirscht, Berlin, DE;
Silicor Materials Inc., Palo Alto, CA (US);
Abstract
A quality control process for determining the concentrations of boron and phosphorous in a UMG-Si feedstock batch is provided. A silicon test ingot is formed by the directional solidification of molten UMG-Si from a UMG-Si feedstock batch. The resistivity of the silicon test ingot is measured from top to bottom. Then, the resistivity profile of the silicon test ingot is mapped. From the resistivity profile of the silicon test ingot, the concentrations of boron and phosphorous of the UMG-Si silicon feedstock batch are calculated. Additionally, multiple test ingots may be grown simultaneously, with each test ingot corresponding to a UMG-Si feedstock batch, in a multi-crucible crystal grower.