Augusta, Italy

Angelo Pinto

This inventor holds 7 USPTO granted patents. Top assignees: Stmicroelectronics S.r.l., Other. Active years: 1997-2003.

IDiyas Innovation Intelligence. (2026). Inventor Profile: Angelo Pinto. Retrieved from https://idiyas.com/inventor/angelo-pinto-fioxpooi

Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile


% Patents Active = 100.0

Average Co-Inventor Count = 1.8

ph-index = 3

Forward Citations = 32(Granted Patents)


Location History:

  • Casalvelino (Salerno), IT (1997)
  • Agusta, IT (2001)
  • Siracusa, IT (2002)
  • Augusta, IT (2000 - 2003)

Company Filing History:


Years Active: 1997-2003

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7 patents (USPTO):Explore Patents

Title: Angelo Pinto: Innovator in Bipolar Electronic Devices

Introduction

Angelo Pinto is a distinguished inventor based in Augusta, Italy, known for his significant contributions to the field of electronic devices. With a total of seven patents to his name, Pinto has made remarkable advancements in bipolar electronic technology.

Latest Patents

Among his latest patents is the "PNP lateral bipolar electronic device and corresponding manufacturing process." This invention pertains to a method for creating a lateral PNP bipolar electronic device that is integrated monolithically on a semiconductor substrate alongside other NPN type bipolar devices. The device features a semiconductor substrate doped with P-type impurities, a buried layer doped with N-type impurities to form a base region, and an active area with collector and emitter regions separated by a base channel region. The manufacturing process is innovative, utilizing a contact opening formed by shifting an emitter mask.

Another notable patent is the "Manufacturing process of a germanium implanted HBT bipolar transistor." This process fabricates a vertical structure high carrier mobility transistor on a crystalline silicon substrate doped with N-type impurities. The method includes defining a window in the substrate, implanting germanium atoms, and applying a rapid thermal annealing treatment to reconstruct the crystal lattice. This fabrication process enhances the frequency application range of HBT transistors while minimizing deviations in base currents.

Career Highlights

Angelo Pinto has worked with prominent companies in the electronics sector, including STMicroelectronics S.r.l. His experience in these organizations has contributed to his expertise in developing advanced electronic devices.

Collaborations

Pinto has collaborated with notable colleagues such as Carlo Alemanni and Davide Giuseppe Patti, further enriching his professional journey and innovation efforts.

Conclusion

Angelo Pinto's work in bipolar electronic devices showcases his innovative spirit and technical expertise. His patents reflect a commitment to advancing technology in the semiconductor industry.

Profile summary based on public USPTO records.
Data Sources: USPTO Patent Grant XML, Patent Center, EPO & CIPO • Normalized by IDiyas Innovation Graph. Methodology & provenance architecturePlease report any incorrect information to [email protected]
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