Haasrode, Belgium

Andriy Hikavyy

USPTO Granted Patents = 2 

Average Co-Inventor Count = 2.9

ph-index = 1

Forward Citations = 3(Granted Patents)


Company Filing History:


Years Active: 2019-2023

Loading Chart...
2 patents (USPTO):

Title: The Innovative Mind of Andriy Hikavyy

Introduction

Andriy Hikavyy, an accomplished inventor based in Haasrode, Belgium, has made notable contributions to the field of semiconductor technology. With two patents to his name, Hikavyy's work plays a significant role in advancing the capabilities of semiconductor materials and devices.

Latest Patents

Hikavyy's latest innovations include:

1. **Formation of a Ga-doped SiGe and B/Ga-doped SiGe layers** - This method involves depositing Ga-doped SiGe on a substrate in the presence of a carbon-containing Ga precursor, thereby creating the initial portion of the Ga-doped SiGe layer. Subsequent layers of SiGe are deposited without the precursor, forming the second portion and enhancing the overall characteristics of the material.

2. **Internal spacers for nanowire semiconductor devices** - This invention provides a novel approach to forming internal spacers between nanowires. The process consists of creating a recess by selectively removing sacrificial material from a layered fin. After depositing dielectric material into the recess, it is structured to ensure accessibility to the nanowire material, which allows for the growth of electrode material that merges at the outer ends, thus optimizing device performance.

Career Highlights

Andriy Hikavyy works with Imec Vzw, a renowned research and development organization specializing in nanoelectronics and digital technologies. His contributions in the field have positioned him as a prominent figure, and his innovative research has pushed the boundaries of semiconductor technology.

Collaborations

During his time at Imec Vzw, Hikavyy has collaborated with esteemed colleagues such as Kurt Wostyn and Hans Mertens. These collaborations have fostered a dynamic environment for innovation and have facilitated the successful development of groundbreaking technologies in semiconductors.

Conclusion

With a strong foundation in semiconductor research and a commitment to innovation, Andriy Hikavyy continues to pave the way for advancements in technology. His patents not only highlight his inventive spirit but also contribute to the evolving landscape of semiconductor devices, signifying his importance in the realm of modern engineering.

This text is generated by artificial intelligence and may not be accurate.
Please report any incorrect information to support@idiyas.com
Loading…