The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jan. 03, 2023
Filed:
Dec. 03, 2020
Applicant:
Imec Vzw, Leuven, BE;
Inventors:
Andriy Hikavyy, Haasrode, BE;
Clement Porret, Kessel-Lo, BE;
Assignee:
IMEC VZW, Leuven, BE;
Primary Examiner:
Int. Cl.
CPC ...
H01L 21/02 (2006.01); H01L 29/16 (2006.01); H01L 29/78 (2006.01);
U.S. Cl.
CPC ...
H01L 21/02532 (2013.01); H01L 21/0257 (2013.01); H01L 21/0262 (2013.01); H01L 21/02381 (2013.01); H01L 29/16 (2013.01); H01L 29/7848 (2013.01);
Abstract
A method for forming a Ga-doped SiGe layer comprises depositing, in the presence of a C-containing Ga precursor, Ga-doped SiGe on a substrate, thereby forming a first portion of the Ga-doped SiGe layer. The method further comprises depositing, in the absence of the C-containing Ga precursor, SiGe on the first portion, thereby forming a second portion of the Ga-doped SiGe layer.