Company Filing History:
Years Active: 2005
Title: The Innovative Contributions of Andrew Ralston
Introduction
Andrew Ralston is a notable inventor based in Richardson, TX (US). He has made significant contributions to the field of semiconductor manufacturing, particularly through his innovative patent related to dual damascene interconnect structures. His work has implications for improving the efficiency and effectiveness of electronic devices.
Latest Patents
Andrew Ralston holds a patent titled "Process flow for dual damascene interconnect structures." This patent describes a dual damascene process flow for forming interconnect lines and vias. In this process, at least part of the via is etched prior to the trench etch. A low-k material, such as a thermoset organic polymer, is utilized for the interlayer dielectric (ILD) and intermetal dielectric (IMD). After the partial via etch, a bottom anti-reflective coating (BARC) is deposited over the structure, including in the via. The trench is then patterned and etched, ensuring that the bottom of the via is protected despite some BARC material being removed during the trench etch. This innovative approach enhances the reliability and performance of semiconductor devices.
Career Highlights
Andrew Ralston is associated with Texas Instruments Corporation, a leading company in the semiconductor industry. His work at Texas Instruments has allowed him to contribute to advancements in technology that are crucial for modern electronics. His patent reflects his expertise and commitment to innovation in the field.
Collaborations
Andrew has collaborated with notable colleagues, including Francis Gabriel Celii and Guoqiang Xing. These collaborations have likely enriched his work and contributed to the development of cutting-edge technologies in semiconductor manufacturing.
Conclusion
Andrew Ralston's contributions to the field of semiconductor technology through his innovative patent demonstrate his role as a significant inventor. His work continues to influence the industry and improve electronic device performance.