This inventor holds 4 USPTO granted patents and 1 published patent application. Top assignees: Globalfoundries Inc., International Business Machines Corporation. Active years: 2015-2017.
Location History:
- Burlington, VT (US) (2015)
- Essex Junction, VT (US) (2017)
Company Filing History:
2 out of 5,671 
2 out of 166,264 
Years Active: 2015-2017
Title: The Innovative Contributions of Andrew H Norfleet
Introduction
Andrew H Norfleet is a notable inventor based in Burlington, VT (US), recognized for his significant contributions to the field of semiconductor technology. With a total of 4 patents to his name, Norfleet has developed innovative solutions that enhance the performance and reliability of semiconductor structures.
Latest Patents
Norfleet's latest patents include groundbreaking inventions such as "Determining Thermal Profiles of Semiconductor Structures." This invention involves a method for forming a semiconductor substrate and determining its thermal profile by measuring luminescent intensity values before and after exposure to specific conditions. Another notable patent is the "Method of Self-Correcting Power Grid for Semiconductor Structures." This invention describes a self-correcting power grid that utilizes interconnect layers with metal lines and fuses designed to isolate defects during testing processes.
Career Highlights
Throughout his career, Norfleet has worked with prominent companies in the technology sector, including IBM and Globalfoundries Inc. His experience in these organizations has allowed him to refine his skills and contribute to cutting-edge semiconductor innovations.
Collaborations
Norfleet has collaborated with talented individuals in the field, including Nicholas G Clore and Jared P Yanofsky. These partnerships have fostered a creative environment that has led to the development of impactful technologies.
Conclusion
Andrew H Norfleet's work exemplifies the spirit of innovation in the semiconductor industry. His patents and collaborations reflect a commitment to advancing technology and improving the functionality of semiconductor structures.