Moscow, Russia

Andrei Vladimirovich Pebalk

This inventor holds 1 USPTO granted patent. Top assignee: Hitachi, Ltd.. Active years: 2005.

IDiyas Innovation Intelligence. (2026). Inventor Profile: Andrei Vladimirovich Pebalk. Retrieved from https://idiyas.com/inventor/andrei-vladimirovich-pebalk

Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile


Average Co-Inventor Count = 7.0

ph-index = 1

Forward Citations = 4(Granted Patents)


Company Filing History:


Years Active: 2005

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1 patent (USPTO):Explore Patents

Title: The Innovations of Andrei Vladimirovich Pebalk

Introduction

Andrei Vladimirovich Pebalk is a notable inventor based in Moscow, Russia. He has made significant contributions to the field of semiconductor technology. His work focuses on developing materials that enhance the performance and reliability of electronic devices.

Latest Patents

One of Pebalk's key inventions is a patent for a polyparaxylylene film, which includes a production method and a semiconductor device utilizing this film. This organic polymer film boasts a low dielectric constant and high heating resistance, making it an ideal insulating layer for semiconductor devices. The patent highlights both the manufacturing method for the film and its application in semiconductor technology.

Career Highlights

Andrei Pebalk is currently employed at Hitachi, Ltd., where he continues to innovate in the field of materials science. His expertise in polymer films has positioned him as a valuable asset in the development of advanced semiconductor devices.

Collaborations

Pebalk has collaborated with notable colleagues, including Akio Takahashi and Yuichi Satsu. These partnerships have fostered a collaborative environment that encourages innovation and the sharing of ideas.

Conclusion

Andrei Vladimirovich Pebalk's contributions to semiconductor technology through his innovative patent demonstrate his commitment to advancing the field. His work continues to influence the development of high-performance electronic devices.

Profile summary based on public USPTO records.
Data Sources: USPTO Patent Grant XML, Patent Center, EPO & CIPO • Normalized by IDiyas Innovation Graph. Methodology & provenance architecturePlease report any incorrect information to [email protected]
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