Bochum, Germany

Andreas Stephan

This inventor holds 1 USPTO granted patent. Top assignee: Universitat Kassel. Active years: 2007.

IDiyas Innovation Intelligence. (2026). Inventor Profile: Andreas Stephan. Retrieved from https://idiyas.com/inventor/andreas-stephan-ydgj4g52

Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile


Average Co-Inventor Count = 4.0

ph-index = 1

Forward Citations = 6(Granted Patents)


Company Filing History:


Years Active: 2007

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1 patent (USPTO):Explore Patents

Title: Andreas Stephan: Innovator in Shadow Mask Technology

Introduction

Andreas Stephan is a notable inventor based in Bochum, Germany. He has made significant contributions to the field of ion beam technology, particularly through his innovative patent related to shadow masks.

Latest Patents

Andreas holds a patent for a "Shadow mask and method for producing a shadow mask." This invention involves a shadow mask designed for ion beams, which comprises a silicon wafer featuring a specific hole pattern. The silicon wafer is coated with a metallic layer that effectively stops the ion beams and dissipates heat. The apertured region of the silicon wafer has a thickness ranging from about 20 µm to about 200 µm, while the apertures in the shadow mask have lateral dimensions between approximately 0.5 µm and 3 µm.

Career Highlights

Andreas is affiliated with the Universitat Kassel, where he continues to advance his research and development in the field of ion beam technology. His work has garnered attention for its potential applications in various scientific and industrial processes.

Collaborations

Andreas has collaborated with notable colleagues, including Jan Meijer and Ulf Weidenmuller, contributing to a dynamic research environment that fosters innovation.

Conclusion

Andreas Stephan's contributions to shadow mask technology exemplify the impact of innovative thinking in the field of ion beam applications. His work continues to influence advancements in this specialized area of research.

Profile summary based on public USPTO records.
Data Sources: USPTO Patent Grant XML, Patent Center, EPO & CIPO • Normalized by IDiyas Innovation Graph. Methodology & provenance architecturePlease report any incorrect information to [email protected]
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