The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Feb. 27, 2007

Filed:

Aug. 14, 2001
Applicants:

Jan Meijer, Bochum, DE;

Andreas Stephan, Bochum, DE;

Ulf Weidenmuller, Bochum, DE;

Ivo Rangelow, Baunatal, DE;

Inventors:

Jan Meijer, Bochum, DE;

Andreas Stephan, Bochum, DE;

Ulf Weidenmuller, Bochum, DE;

Ivo Rangelow, Baunatal, DE;

Assignee:

Universitat Kassel, Kassel, DE;

Attorney:
Primary Examiner:
Int. Cl.
CPC ...
G03F 1/00 (2006.01); G03C 5/00 (2006.01);
U.S. Cl.
CPC ...
Abstract

The disclosed device is directed towards a shadow mask for ion beams comprising a silicon wafer with a hole pattern arranged therein, wherein the silicon wafer is provided at a side confronting the incident ion beams with a metallic coating which stops the ion beams and dissipates heat, wherein an apertured region of the silicon wafer has a thickness from about 20 μm to about 200 μm and apertures in the shadow mask have lateral dimensions from about 0.5 μm to about 3 μm.


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