This inventor holds 1 USPTO granted patent and 2 EPO patents. Top assignee: Fraunhofer-Gesellschaft Zur Foerderung Der Angewandten Forschung E.v.. Active years: 2018.
Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile
Company Filing History:
Years Active: 2018
Title: Andreas Hürner: Innovator in Schottky Diode Technology
Introduction
Andreas Hürner is a notable inventor based in Nürnberg, Germany. He has made significant contributions to the field of semiconductor technology, particularly in the development of Schottky diodes. His innovative approach has led to advancements in manufacturing methods that enhance the performance of power diodes.
Latest Patents
Hürner holds a patent for a Schottky diode and the method for its manufacturing. The invention disclosure outlines a unique manufacturing method for creating JBS areas for a unipolar power diode based on diamond. This method involves applying an n-doped layer to a typically p-doped drift region through epitaxial layer growth. The n-doped layer is then selectively removed in defined areas using a photolithographic mask, followed by dry or wet chemical etching. After structuring the JBS areas, Schottky metal is applied to the entire surface. This innovative JBS structure effectively shields the electric field generated by an applied reverse voltage from the Schottky transition. The reverse voltage, which is fully shielded from the Schottky transition, can be adjusted by modifying the distance between the JBS areas.
Career Highlights
Andreas Hürner is associated with the Fraunhofer Gesellschaft zur Förderung der Angewandten Forschung e.V., a leading research organization in Germany. His work at this institution has allowed him to collaborate with other experts in the field and contribute to cutting-edge research and development.
Collaborations
One of Hürner's notable collaborators is Tobias Erlbacher. Their partnership has fostered innovation and has been instrumental in advancing the technology surrounding Schottky diodes.
Conclusion
Andreas Hürner's contributions to semiconductor technology, particularly through his patent on Schottky diodes, highlight his role as an influential inventor in the field. His innovative methods continue to impact the development of power diodes, showcasing the importance of research and collaboration in driving technological advancements.
Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile
