The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Nov. 27, 2018
Filed:
Oct. 17, 2016
Fraunhofer Gesellschaft Zur Förderung Der Angew. Forschung E.v., Munich, DE;
Andreas Hürner, Nürnberg, DE;
Tobias Erlbacher, Poxdorf, DE;
Abstract
The invention disclosure describes a manufacturing method for realizing so-called JBS areas for a unipolar power diode on the basis of diamond. In this special method, an n-doped layer is applied to the typically p-doped drift region, e.g. by means of epitaxial layer growth. The applied n-doped layer is then removed again in defined areas. A photolithographic mask may be applied and the n-doped layer is removed by dry or wet chemical etching. Having structured the JBS areas, the Schottky metal is applied to the entire surface. The resulting JBS structure shields an electric field generated by an applied reverse voltage from the Schottky transition. The reverse voltage from which the Schottky transition is fully shielded can be adjusted by altering the distance between the JBS areas.
Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile