Company Filing History:
Years Active: 2003-2010
Title: The Innovative Contributions of Andreas Hauser
Introduction
Andreas Hauser is a notable inventor based in Schrobenhausen, Germany. He has made significant contributions to the field of semiconductor technology, particularly in the area of etching processes. With a total of 2 patents, his work has advanced the capabilities of silicon substrate processing.
Latest Patents
Hauser's latest patents include a "System and method for anisotropically etching a recess in a silicon substrate." This invention discloses a method and apparatus that utilizes plasma for the energetic excitation of a reactive etching gas. The process allows for the anisotropic etching of a recess in a silicon substrate, deepening it by at least fifty micrometers without interrupting the gas flow. Another significant patent is the "Method of fabricating a patterned metal-containing layer on a semiconductor wafer." This method involves forming a metal-containing layer on a substrate, followed by the creation of a patterned mask layer through lithography. The patterned mask layer is then used to define an electrode from the metal-containing layer, which is subsequently uncovered through chemical mechanical polishing.
Career Highlights
Andreas Hauser is currently employed at Infineon Technologies AG, a leading company in semiconductor solutions. His work at Infineon has allowed him to apply his innovative ideas in a practical setting, contributing to the advancement of technology in the semiconductor industry.
Collaborations
Throughout his career, Hauser has collaborated with notable colleagues such as Volker Weinrich and Gerhard Beitel. These collaborations have fostered an environment of innovation and have led to the development of cutting-edge technologies in their field.
Conclusion
Andreas Hauser's contributions to semiconductor technology through his patents and work at Infineon Technologies AG highlight his role as a key innovator in the industry. His advancements in etching processes continue to influence the development of semiconductor manufacturing techniques.
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