Infineon Technologies Ag

Andreas Hauser

Volker Weinrich

Gerhard Beitel

Kai-Olaf Subke

Thorsten Hanewald

Ingold Janssen

Peter Bosk

A method and apparatus for anisotropically etching a recess in a silicon substrate is disclosed. Generally, a plasma is used for energetic excitation of a reactive etching gas, wherein the reactive etching gas is a constituent of a continuous gas flow. A recess is anisotropically etched in a silicon substrate using the reactive etching gas, during which time the recess id deepened by at least fifty micrometers without interrupting the gas flow of the reactive etching gas.

System and method for anisotropically etching a recess in a silicon substrate

A metal-containing layer is formed on a substrate. A mask layer is formed on the metal-containing layer. The mask layer is patterned by way of a lithographically fabricated mask. The metal-containing layer is patterned with the patterned mask layer, to thereby form an electrode out of the metal-containing layer. A protective layer is deposited on the mask layer and on the substrate. The protective layer undergoes chemical mechanical polishing, during which the protective layer is removed and the electrode is uncovered.

Method of fabricating a patterned metal-containing layer on a semiconductor wafer

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Schrobenhausen, Germany

Andreas Hauser