The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Sep. 21, 2010
Filed:
Jan. 10, 2006
Thorsten Hanewald, Bad Dürkheim, DE;
Andreas Hauser, Schrobenhausen, DE;
Ingold Janssen, München, DE;
Kai-olaf Subke, Grafing, DE;
Thorsten Hanewald, Bad Dürkheim, DE;
Andreas Hauser, Schrobenhausen, DE;
Ingold Janssen, München, DE;
Kai-Olaf Subke, Grafing, DE;
Infineon Technologies AG, Munich, DE;
Abstract
A method and apparatus for anisotropically etching a recess in a silicon substrate is disclosed. Generally, a plasma is used for energetic excitation of a reactive etching gas, wherein the reactive etching gas is a constituent of a continuous gas flow. A recess is anisotropically etched in a silicon substrate using the reactive etching gas, during which time the recess id deepened by at least fifty micrometers without interrupting the gas flow of the reactive etching gas.