Saint Ismier, France

André Schiltz

This inventor holds 1 USPTO granted patent. Top assignee: France Télécom. Active years: 2003.

IDiyas Innovation Intelligence. (2026). Inventor Profile: André Schiltz. Retrieved from https://idiyas.com/inventor/andrandeacute-schiltz

Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile

Calculating rank

Average Co-Inventor Count = 1.0

ph-index = 1

Forward Citations = 2(Granted Patents)


Company Filing History:


Years Active: 2003

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1 patent (USPTO):Explore Patents

Title: The Innovations of André Schiltz

Introduction

André Schiltz is a notable inventor based in Saint Ismier, France. He has made significant contributions to the field of semiconductor technology, particularly in photolithography processes. His work focuses on enhancing the efficiency and effectiveness of semiconductor manufacturing.

Latest Patents

André Schiltz holds a patent for a double resin layer designed for extreme ultraviolet light (EUV) photolithography. This innovative resin serves as a semiconductor substrate etching masking layer, allowing patterns to be transferred by photolithography at extreme ultraviolet light wavelengths ranging from 10 to 100 nm. The resin is resistant to plasma etching, making it a valuable asset in the semiconductor industry.

Career Highlights

Schiltz is currently associated with France Télécom, where he applies his expertise in photolithography to advance semiconductor technologies. His work has been instrumental in developing processes that improve the precision and reliability of semiconductor manufacturing.

Collaborations

Due to space constraints, the details of André Schiltz's collaborations will not be included.

Conclusion

André Schiltz's contributions to the field of semiconductor technology through his innovative patent demonstrate his commitment to advancing the industry. His work continues to influence the development of efficient photolithography processes.

Profile summary based on public USPTO records.
Data Sources: USPTO Patent Grant XML, Patent Center, EPO & CIPO • Normalized by IDiyas Innovation Graph. Methodology & provenance architecturePlease report any incorrect information to [email protected]
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