Haifa, Israel

Anastasia Brif

This inventor holds 1 USPTO granted patent. Top assignee: Technion Research & Development Foundation Ltd. Active years: 2017.

IDiyas Innovation Intelligence. (2026). Inventor Profile: Anastasia Brif. Retrieved from https://idiyas.com/inventor/anastasia-brif

Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile


Average Co-Inventor Count = 2.0

ph-index = 1


Company Filing History:


Years Active: 2017

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1 patent (USPTO):Explore Patents

Title: Innovations by Anastasia Brif in Semiconductor Technology.

Introduction

Anastasia Brif is a notable inventor based in Haifa, Israel. She has made significant contributions to the field of semiconductor technology. Her work focuses on the development of semiconductor materials with tailored properties.

Latest Patents

Anastasia Brif holds a patent for "Crystals of semiconductor material having a tuned band gap energy and method for preparation thereof." This invention provides a semiconductor crystal that incorporates amino acid molecules, peptides, or a combination thereof within the crystal lattice. These components are designed to tune the band gap energy of the semiconductor material, enhancing its functionality.

Career Highlights

Anastasia is associated with the Technion Research & Development Foundation Ltd. Her innovative approach to semiconductor materials has positioned her as a key figure in her field. She has demonstrated a commitment to advancing technology through her research and inventions.

Collaborations

Anastasia collaborates with Boaz Pokroy, contributing to the advancement of semiconductor research. Their partnership exemplifies the importance of teamwork in driving innovation.

Conclusion

Anastasia Brif's work in semiconductor technology showcases her inventive spirit and dedication to enhancing material properties. Her contributions are paving the way for future advancements in the field.

Profile summary based on public USPTO records.
Data Sources: USPTO Patent Grant XML, Patent Center, EPO & CIPO • Normalized by IDiyas Innovation Graph. Methodology & provenance architecturePlease report any incorrect information to [email protected]
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