The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Sep. 26, 2017
Filed:
Sep. 29, 2014
Crystals of semiconductor material having a tuned band gap energy and method for preparation thereof
Applicant:
Technion Research and Development Foundation Ltd., Haifa, IL;
Inventors:
Boaz Pokroy, Haifa, IL;
Anastasia Brif, Haifa, IL;
Assignee:
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 29/167 (2006.01); H01L 29/207 (2006.01); H01L 29/22 (2006.01); H01L 29/227 (2006.01); H01L 29/24 (2006.01); C01B 19/00 (2006.01); C01B 17/00 (2006.01); G01N 33/58 (2006.01); G01N 33/68 (2006.01); C01G 21/21 (2006.01); C01G 9/02 (2006.01); C01G 11/02 (2006.01); C07K 4/00 (2006.01); C07K 9/00 (2006.01);
U.S. Cl.
CPC ...
C01B 19/007 (2013.01); C01G 9/02 (2013.01); C01G 11/02 (2013.01); C01G 21/21 (2013.01); G01N 33/588 (2013.01); G01N 33/68 (2013.01); H01L 29/167 (2013.01); H01L 29/207 (2013.01); H01L 29/2203 (2013.01); H01L 29/227 (2013.01); C01P 2002/74 (2013.01); C01P 2006/40 (2013.01); C07K 4/00 (2013.01); C07K 9/00 (2013.01);
Abstract
The present invention provides a semiconductor crystal comprising a semiconductor material having a tuned band gap energy, and methods for preparation thereof. More particularly, the invention provides a semiconductor crystal comprising a semiconductor material and amino acid molecules, peptides, or a combination thereof, incorporated within the crystal lattice, wherein the amino acid molecules, peptides, or combination thereof tune the band gap energy of the semiconductor material.