Hsinchu, Taiwan

An-hsun Lo

This inventor holds 2 USPTO granted patents and 1 published patent application. Top assignees: Mediatek Corporation, Taiwan Semiconductor Manufacturing Comp. Ltd.. Active years: 2026.

IDiyas Innovation Intelligence. (2026). Inventor Profile: An-hsun Lo. Retrieved from https://idiyas.com/inventor/an-hsun-lo-6v50a5mk

Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile

USPTO Granted Patents = 2 

Average Co-Inventor Count = 4.0

ph-index = 1


Company Filing History:


Years Active: 2026

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2 patents (USPTO):Explore Patents

Title: An-hsun Lo and Semiconductor Device Innovation.

Introduction

An-hsun Lo is an inventor associated with Hsinchu, Taiwan. His patent work includes a semiconductor device design featuring a polygonal inductive device.

Latest Patents

The provided information identifies one patent for Lo: “Semiconductor Device with Polygonal Inductive Device.” The invention describes a polygonal inductive device on a substrate, along with conductive lines on separate layers and a conductive via connecting two of those lines. One conductive line connects to a reference voltage and crosses a line portion of the inductive device when viewed from above. The design concerns the arrangement and electrical connections of components within a semiconductor device.

Career Highlights

Lo is associated with Taiwan Semiconductor Manufacturing Company Limited. His listed patent record reflects work in semiconductor-device design. The supplied information does not specify the patent’s filing or grant date.

Collaborations

En-hsiang Yeh is identified as Lo’s coworker. The available details do not establish whether Yeh collaborated on the patent.

Conclusion

An-hsun Lo’s documented innovation is a semiconductor-device design that integrates a polygonal inductive device with layered conductive components. His record lists 1 patent and an association with Taiwan Semiconductor Manufacturing Company Limited.

Profile summary based on public USPTO records.
Data Sources: USPTO Patent Grant XML, Patent Center, EPO & CIPO • Normalized by IDiyas Innovation Graph. Methodology & provenance architecturePlease report any incorrect information to [email protected]
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