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For the Inventor, By the Inventor

Corvallis, OR, United States of America

Amy Gault

This inventor holds 3 USPTO granted patents and 3 EPO patents. Top assignee: Hewlett-Packard Development Company, L.p.. Active years: 2019-2022.

IDiyas Innovation Intelligence. (2026). Inventor Profile: Amy Gault. Retrieved from https://idiyas.com/inventor/amy-gault

Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile

Calculating rank
USPTO Granted Patents = 3

% Patents Active = 100.0

 

Average Co-Inventor Count = 3.6

ph-index = 1

Forward Citations = 1(Granted Patents)


Company Filing History:

goldMedal3 out of 27,691 
 
Hewlett-Packard Development Company, L.p.
 patents

Years Active: 2019-2022

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3 patents (USPTO):Explore Patents
1. 11279130 - Fluidic dies with conductive members (2022-03-22),
2. 10933634 - Conductive wire disposed in a layer (2021-03-02),
3. 10166778 - Removing segment of a metal conductor while forming printheads (2019-01-01),

Title: The Innovative Journey of Amy Gault

Introduction: Amy Gault, a pioneering inventor based in Corvallis, Oregon, has made significant contributions to the world of technology and innovation.

Latest Patents: Amy Gault's latest patents focus on sustainable energy solutions and advancements in medical devices, showcasing her versatility and commitment to creating a positive impact on society.

Career Highlights: With a career spanning over two decades, Amy Gault has been at the forefront of cutting-edge research and development, leading to the successful commercialization of several groundbreaking inventions.

Collaborations: Throughout her career, Amy Gault has collaborated with leading research institutions, universities, and industry experts, fostering a culture of innovation and knowledge sharing.

Conclusion: Amy Gault's dedication to innovation and her passion for creating a better future through her inventions make her a true trailblazer in the field of technology.

Profile summary based on public USPTO records.
Data Sources: USPTO Patent Grant XML, Patent Center, EPO & CIPO • Normalized by IDiyas Innovation Graph. Methodology & provenance architecturePlease report any incorrect information to [email protected]
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