This inventor holds 1 USPTO granted patent and 1 published patent application. Top assignee: National Technology & Engineering Solutions of Sandia, LLC. Active years: 2026.
Company Filing History:
Years Active: 2026
Title: Amun Jarzembski: Innovator in Reconfigurable Metasurfaces
Introduction
Amun Jarzembski is a notable inventor based in Albuquerque, NM (US). He has made significant contributions to the field of reconfigurable metasurfaces and RF devices. His innovative work focuses on leveraging the acoustoelectric effect to enhance device functionality.
Latest Patents
Amun Jarzembski holds a patent for "Reconfigurable metasurfaces and x-band RF devices employing the acoustoelectric effect." This patent describes a reconfigurable metasurface device that utilizes the interaction of phonon modes and charge carrier distribution in a thin film semiconductor/piezoelectric film stack. The device operates by launching a surface acoustic wave (SAW) into the piezoelectric layer, which propagates and induces a corresponding electric field. This electric field capacitively couples to the thin film semiconductor, leading to periodic modulations of the charge carriers. The resulting charge carrier distribution forms ribbons that follow the phase fronts of the SAW, allowing for modulation of the coupling to plasmonic modes. By adjusting the power and wavelength of the SAW, a reconfigurable metasurface is achieved.
Career Highlights
Amun Jarzembski is currently employed at National Technology & Engineering Solutions of Sandia, LLC. His work at this organization has allowed him to explore advanced technologies and contribute to innovative solutions in the field of engineering and technology.
Collaborations
Amun collaborates with Thomas Edwin Beechem, III, who is also involved in similar research areas. Their partnership enhances the development of cutting-edge technologies and fosters innovation in their respective fields.
Conclusion
Amun Jarzembski is a pioneering inventor whose work in reconfigurable metasurfaces is shaping the future of RF devices. His contributions to the field demonstrate the potential of acoustoelectric interactions in advancing technology.
