The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Jun. 02, 2026

Filed:

Apr. 03, 2023
Applicant:

National Technology & Engineering Solutions of Sandia, Llc, Albuquerque, NM (US);

Inventors:

Aleem Mohammad Siddiqui, Albuquerque, NM (US);

Thomas Edwin Beechem, III, Lafayette, IN (US);

Amun Jarzembski, Albuquerque, NM (US);

Attorney:
Primary Examiner:
Assistant Examiner:
Int. Cl.
CPC ...
H01L 27/146 (2006.01); H01L 27/16 (2006.01); H01L 31/0304 (2006.01); H01L 31/0352 (2006.01); H01L 37/02 (2006.01); H03H 9/02 (2006.01); H03H 9/17 (2006.01); H03H 9/25 (2006.01); H03H 9/64 (2006.01);
U.S. Cl.
CPC ...
H03H 9/6453 (2013.01); H03H 9/02566 (2013.01); H03H 9/175 (2013.01); H03H 9/25 (2013.01);
Abstract

A reconfigurable metasurface device that leverages the interaction of phonon modes and a charge carrier distribution in a thin film semiconductor/piezoelectric film stack via the acoustoelectric interaction is disclosed. A surface acoustic wave (SAW) is launched into the piezoelectric layer. The SAW propagates through the piezoelectric layer, where the resulting strain wave induces a corresponding propagating electric field. This electric field capacitively couples to the thin film semiconductor, where it electrostatically induces periodic modulations of the charge carriers. The charge carrier distribution in the thin film semiconductor will form ribbons of charge carriers following the constant phase fronts of a sufficiently large amplitude SAW. By controlling the charge carrier patterning one can modulate the coupling to the plasmonic modes in the thin film semiconductor. By controlling the charge carrier patterning via the power and wavelength of the SAW, a reconfigurable metasurface results.


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