Sunnyvale, CA, United States of America

Amna Mohammad

This inventor holds 1 USPTO granted patent. Top assignee: Applied Materials, Inc.. Active years: 2007.

IDiyas Innovation Intelligence. (2026). Inventor Profile: Amna Mohammad. Retrieved from https://idiyas.com/inventor/amna-mohammad

Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile

Calculating rank

Average Co-Inventor Count = 5.0

ph-index = 1

Forward Citations = 47(Granted Patents)


Company Filing History:


Years Active: 2007

Loading Chart...
1 patent (USPTO):Explore Patents

Title: Amna Mohammad and Feedback Control in Chemical Vapor Deposition

Introduction

Amna Mohammad is an inventor associated with Sunnyvale, California, and Applied Materials, Inc. Her patent work addresses feedback control in sub-atmospheric chemical vapor deposition, a process used to deposit films onto wafers.

Latest Patents

Mohammad is named on 1 patent: “Method of Feedback Control of Sub-Atmospheric Chemical Vapor Deposition Processes.” The method uses a model that links deposition variables to film properties. After depositing a film with an initial recipe, the process measures a film property, updates the model, and calculates a revised recipe to maintain the desired property. The approach can provide feedback across multiple deposition chambers and can control properties beyond film thickness.

Career Highlights

Mohammad’s patent reflects work on applying measurement and model updates to improve control of semiconductor film deposition. The invention connects observed film properties with adjustments to deposition recipes.

Collaborations

The supplied information lists Arulkumar P. Shanmugasundram and Rong Pan as Mohammad’s coworkers. The patent description focuses on a feedback-control method for chemical vapor deposition.

Conclusion

Amna Mohammad’s patent work centers on using measured film properties and updated process models to maintain target outcomes in sub-atmospheric chemical vapor deposition.

Profile summary based on public USPTO records.
Data Sources: USPTO Patent Grant XML, Patent Center, EPO & CIPO • Normalized by IDiyas Innovation Graph. Methodology & provenance architecturePlease report any incorrect information to [email protected]
Loading…