The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Apr. 10, 2007

Filed:

Jun. 18, 2002
Applicants:

Alexander T. Schwarm, Austin, TX (US);

Arulkumar P. Shanmugasundram, Sunnyvale, CA (US);

Rong Pan, Daly City, CA (US);

Manuel Hernandez, Sunnyvale, CA (US);

Amna Mohammad, Sunnyvale, CA (US);

Inventors:

Alexander T. Schwarm, Austin, TX (US);

Arulkumar P. Shanmugasundram, Sunnyvale, CA (US);

Rong Pan, Daly City, CA (US);

Manuel Hernandez, Sunnyvale, CA (US);

Amna Mohammad, Sunnyvale, CA (US);

Assignee:

Applied Materials, Inc., Santa Clara, CA (US);

Attorney:
Primary Examiner:
Int. Cl.
CPC ...
C23C 16/52 (2006.01);
U.S. Cl.
CPC ...
Abstract

A method of film deposition in a sub-atmospheric chemical vapor deposition (CVD) process includes (a) providing a model for sub-atmospheric CVD deposition of a film that identifies one or more film properties of the film and at least one deposition model variable that correlates with the one or more film properties; (b) depositing a film onto a wafer using a first deposition recipe comprising at least one deposition recipe parameter that corresponds to the at least one deposition variable; (c) measuring a film property of at least one of said one or more film properties for the deposited film of step (b); (d) calculating an updated deposition model based upon the measured film property of step (c) and the model of step (a); and (e) calculating an updated deposition recipe based upon the updated model of step (d) to maintain a target film property. The method can be used to provide feedback to a plurality of deposition chambers or to control a film property other than film thickness.


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