Amal Ma Hamad

Title: Amal Ma Hamad: Innovator in Semiconductor Technology

Introduction

Amal Ma Hamad is a prominent inventor based in Frisco, TX (US). She has made significant contributions to the field of semiconductor technology, particularly in the development of bipolar junction transistors. With a total of 8 patents to her name, her work has had a substantial impact on the industry.

Latest Patents

One of her latest patents is focused on "Multiple doping level bipolar junctions transistors and method for forming." This innovative process involves creating bipolar junction transistors with varying collector doping densities on a semiconductor substrate. The integrated circuit comprises these transistors, which are formed during the creation of a triple well for isolation purposes. The process also includes a second doping step after the formation of a gate stack for field effect transistors. Notably, this invention allows for the formation of bipolar junction transistors with six different collector dopant densities, each exhibiting unique breakdown characteristics.

Career Highlights

Amal Ma Hamad has built her career at Agere Systems Inc., where she has been instrumental in advancing semiconductor technologies. Her expertise in bipolar junction transistors has positioned her as a key player in the field, contributing to the development of innovative solutions that enhance electronic devices.

Collaborations

Throughout her career, Amal has collaborated with notable colleagues, including Daniel Charles Kerr and Michael Scott Carroll. These partnerships have fostered a creative environment that has led to groundbreaking advancements in semiconductor technology.

Conclusion

Amal Ma Hamad's contributions to the field of semiconductor technology through her patents and collaborations highlight her role as an influential inventor. Her work continues to shape the future of electronic devices and semiconductor applications.